An equivalent circuit model for uni-traveling-carrier photodiode

In this paper, an equivalent circuit model of uni-traveling-carrier photodiode (UTC-PD) is developed. According to the feature of UTC-PD, hole continuity equation is ignored and only electron continuity equation is introduced, which decreases the complexity of the model. The model is based on a simplified structure and can well express the feature of UTC-PD. Several direct current (DC) and alternating current (AC) analyses are performed to test the model, and the results from the model agree well with that of numerical simulation.     

Design of a Triaxial Piezoelectric Accelerometer

A monolithic MEMS triaxial accelerometer based on piezoelectric lead zirconate titanate (PZT) thin films with highly symmetric quad-beams and a seismic mass, has been designed and simulated. Theoretical and numerical models for this structure are presented. The dynamic response and the trade-off between several design considerations are discussed. Static and modal simulations with FEM (Finite Element Method) simulator have been performed to analyze the mechanical response. It shows that the sensitivities of the three axes (X, Y, Z) are respectively 27, 27, and 29 mv/g, and there is almost no transverse sensitivity for the accelerometer. Also, the device is expected to have good temperature performance.     

DEVICE DESIGN FOR THE NOVEL HANDWRITING RECOGNITION SYSTEM

ABSTRACT

A microelectromechanical systems-based handwriting system device was designed. We proposed an ominidirectional acoustical sensor microarray which can offer isotropic directional sensitivity with a high radiation acoustic power when it as a transmitter and a high array spatial gain (AG) when it as a receiver. It has been designed for use in the novel handwriting recognition system to attain a large writeable scale and to write in any direction. The proposed array device based on novel ferroelectric thin film has excellent performance, miniature size and high reliability, and could be fabricated with conventional integrated circuit process.     

Theoretical and experimental study on the heat transport in metallic nanofilms heated by ultra-short pulsed laser

In this paper the mechanism of heat transport in metallic nanofilms under ultra-short pulsed laser heating is examined theoretically and experimentally. In order to easily understand the non-equilibrium heat transport in metallic nanofilms the study of heat transport behavior is first carried out in dielectrics. The analyses indicate that there may be two kinds of wave phenomena in dielectrics subjected to a periodic surface temperature. One is the thermal wave governed by the C-V model based hyperbolic equation and the other is the diffusive wave governed by the Fourier model based parabolic equation. According to the hyperbolic two step model for non-equilibrium heat transport, such two kinds of wave phenomena can also occur simultaneously in the metallic nanofilms under pulsed laser heating, where the diffusive wave is induced by the electron temperature oscillation at the surface due to the non-equilibrium between electrons and lattices. Unlike the propagation speed of the thermal wave, the propagation speed of the diffusive wave depends not only on the medium properties but also the period of the temperature oscillation at the boundary. Hence, the propagation speed of the diffusive wave in the electron gas may be of as high as 10⁶ m s⁻¹, when the laser pulse duration is less than 1 ps. A transient thermoreflectance (TTR) system has been built to measure the transient electron temperature responses caused by the femtosecond laser heating and a pump-probe technique is used to ensure the femtosecond temporal resolution in the experiments. Different from the commonly used front heating-front detecting (FF) method for measuring the material properties, a rear heating-front detecting (RF) method is applied, so that measuring the propagation speed of heat becomes available. The non-equilibrium heat diffusion model is used to fit the measured normalized electron temperature profiles of 27.2 nm, 39.9 nm and 55.5 nm Au films. The best-fitted coupling factor G basically agrees with the theoretical value 2.3 × 10¹⁶ W m⁻³ K⁻¹. The propagation speed of the diffusive wave in the electron gas can be obtained by comparing the measured delay time of peak electron temperatures of Au films with different thicknesses. The average propagation speed of the temperature oscillation or diffusive wave in Au films for the range of thickness from 27.2 nm to 55.5 nm is equal to 8.1 × 10⁵ m s⁻¹, which is close to the value predicted by the non-equilibrium heat diffusion model.     

Modeling of double-π equivalent circuit for on-chip symmetric spiral inductors

We present a novel methodology to extract model parameters from measured S-parameters for silicon on-chip center-tapped symmetric spiral inductors. The double-π equivalent circuit topology is employed in which conductor skin effect is considered. The automated extraction procedure based on modified differential evolution is demonstrated to be efficient and effective. To verify the accuracy of the new methodology, 17 center-taped symmetric inductors were fabricated and the equivalent circuit parameters were extracted from two-port S-parameters measurements over the frequency range of 0.3–8.5 GHz. The excellent accuracy of the results demonstrates the flexibility of the modeling methodology. The new methodology should be useful in the design of RF ICs and mixed signal ICs.     

CVD diamond grown by microwave plasma in mixtures of acetone/oxygen and acetone/carbon dioxide

Diamond has been deposited on silicon and molybdenum substrates by microwave plasma enhanced chemical vapor deposition technique in acetone/oxygen and acetone/carbon dioxide mixtures. A narrow C/O ratio around 1:1 was found necessary for diamond to be deposited under our deposition conditions. Diamond of good quality was deposited at rates exceeding 25 μm/h. By the use of high power density microwave plasmas, diamond deposition using these two mixtures has been achieved at substrate temperatures up to around 1300°C. A comparison between the diamond deposition process using these two mixtures without additional hydrogen gas and the traditional diamond deposition process using the mixture of methane and hydrogen will be made.     

一种具有片上译码/放大功能的微阵列电路及其与生物纳米系统的集成

提出了一种用SMIC 0.18μm CMOS混合信号工艺实现的全集成CMOS微阵列生物芯片,并成功地实现了其与一种新的生物纳米系统的集成. 该电路实现了19μm×19μm电极的4×4 (16单元）阵列,反相电极,电流模式放大器,译码电路,以及逻辑控制电路的单片集成,并能够提供-1.6~1.6V的组装电压,8bit的电位分辨率及39.8dB的电流增益,电源电压为1.8V,而失调和噪声电流分别为5.9nA和25.3pArms. 在实验中,利用该电路实现了对30nm聚乙烯醇包裹的磁性粒子的片上选择性组装,并对实验结果进行了讨论,从而验证了该电路的正确性和该集成方法的可行性.     

一种900MHz RFID读卡器中的高性能CMOS频率综合器

实现了一个应用于RFID系统的低功耗、低噪声的锁相环频率综合器.该频率综合器采用UMC 0.18μm CMOS工艺实现,输入时钟为13MHz,经测试验证输出频率为718～915MHz,相位噪声为-124dBc/1MHz,-101.13dBc/100kHz,频率分辨率为200kHz,功耗为54mW.     

Thermal analysis of reservoir structure versus capillary pumped loop

Capillary pumped loop (CPL) was already used in man-made satellites and space aircrafts with proven heat control technology. However, small-sized CPL had not yet made a breakthrough application in electronic components owing to poor heat-absorption capacity of evaporator structure. Hence, a small-scale CPL was designed for server in this research. The evaporator was designed with a circular groove and embedded with a high density polyethylene (HDPE) as a capillary structure to absorb working fluid. The influence of reservoir upon thermal resistance was also analyzed. The experimental results showed that, under a filling level of 72%, CPL with optimized design could remove 110 W energy while maintaining its temperature at 80 °C. Comparison of CPL with/without reservoir, the loop thermal resistance R_th,loop was reduced by 0.14 °C/W and was able to increase the stability of CPL, too, the results confirmed that reservoir could enhance CPL performance and this technology will probably find application in electronics cooling for electronic devices.     

A dual-band reconfigurable direct-conversion receiver RF front-end

6 dBm at 2.2 GHz, and a gain of 18.8 dB and IIP3 of 7.3 dBm at 4.5 GHz. The whole front-end consumes 12 mA current at 1.2 V voltage supply for the LNA and 2.1 mA current at 1.8 V for the mixer, with a die area of 1.2 × 1 mm2.